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| RT3T55U Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3T55U RT1N144 package. is a composite and transistor built with chip RT1P144 chip in USM6F OUTLINE DRAWING 1.6 0.05 1pin 1.2 0.05 Unitmm (0.5) 6 FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting 1.6 0.05 1. 0 0.5 1 (0.95) 0.5 2 (0.5) 5 0.2 0.05 APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit PNP built in transistor of ""sign is abbreviation. 0.5 0.05 3 (0.1 0.2) 4 0.12 0.05 RTr1 R1 R2 R2 RTr2 R1 TERMINAL CONNECTOR EMITTER1 BASE1 COLLECTOR2 EMITTER2 BASE2 :COLLECTOR1 JEITA ISAHAYAUSM6F MAXIMUM RATING (Ta=25) (Tr1, Tr2 common) SYMBOL VCBO VEBO VCEO IC ICM PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipationTotal, Ta=25 Junction temperature Storage temperature RATING 50 6 50 100 200 125 150 -55150 UNIT V V V mA mA mW 2 3 6 5 4 MARKING 55 ISAHAYA ELECTRONICS CORPORATION RT3T55U Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25) Symbol V(BR)CEO ICBO hFE VCE(sat) VI(ON) VI(OFF) R1 R2/R1 fT Parameter Collector to Emitter break down voltage Collector cut off current DC forward current gain Collector to Emitter saturation voltage Input on voltage Input off voltage Input resistor Resistor ratio Gain band width product (Tr1,Tr2 common) Limits Min 50 50 0.4 7.0 4.2 Tr1 Tr2 Typ 0.1 1.2 0.7 10 4.7 200 150 Max 0.1 0.3 1.8 13 5.1 Unit V A V V V k MHZ Test conditions IC=100A,RBE= VCB =50V,IE=0 VCE=5V,IC=5mA IC=10mA,IB=0.5mA VCE=0.2V,IC=5mA VCE=5V,IC=100A VCE=6V,IE=-10mA TYPICAL CHARACTERISTICS 100 VCE=0.2V (Tr1) 1000 DC FORWARD CURRENT GAIN hFE DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT VCE=5V INPUT ON VOLTAGE VS. COLLECTOR CURRENT INPUT ON VOLTAGE VI(ON)(V) 10 100 1 1 10 COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT VS. INPUT OFF VOLTAGE 1000 VCE=5V COLLECTOR CURRENT IC(mA) 10 100 1 10 COLLECTOR CURRENT IC(mA) 100 100 10 0.0 0.4 0.8 1.2 1.6 2.0 INPUT OFF VOLTAGE VI(OFF)(V) ISAHAYA ELECTRONICS CORPORATION RT3T55U Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type TYPICAL CHARACTERISTICS (Tr2) DC forward current gain-Collector Current DC forward current gain 1000 VCB=-5V Input On Voltage Input On Voltage - Collector Current -10 VCB=-0.2V 100 -1 10 -0.1 -1 -10 Collector Current -100 1 -1 -10 Collector Current -100 Collector Current - Input Off Voltage Collector Current -1000 VCB=-5V -100 -10 -0 -0.4 -0.8 -1.2 -1.6 Input Off Voltage -2 ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! *ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials *These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer's application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. *ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. *All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. *ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. *The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. *If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is h prohibited. *Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Jan.2003 |
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